BTS142D Ver la hoja de datos (PDF) - Infineon Technologies

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BTS142D

Smart Lowside Power Switch

Infineon Technologies 

HITFETÒ II.Generation BTS 142 D

Smart Lowside Power Switch

Features

· Logic Level Input

· Input Protection (ESD)

· Thermal shutdown with

auto restart

· Overload protection

· Short circuit protection

· Overvoltage protection

· Current limitation

· Analog driving possible

Product Summary

Drain source voltage VDS

42 V

On-state resistance RDS(on) 28 mW

Nominal load current ID(Nom) 4.6 A

Clamping energy

EAS

3.5 J

P-TO252-3-11

Application

· All kinds of resistive, inductive and capacitive loads in switching

or linear applications

· µC compatible power switch for 12 V DC applications

· Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded

protection functions.

Vbb

HITFET â

In

Pin 1

Gate-Driving

Unit

Current

Limitation

Overvoltage-

Protection

M

Drain

Pin 2 and 4 (TAB)

ESD

Overload

Protection

Over-

temperature

Protection

Short circuit

Protection

Source

Pin 3

Complete product spectrum and additional information http://www.infineon.com/hitfet

Page 1

2004-03-05

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