DS1245W-100 Ver la hoja de datos (PDF) - Dallas Semiconductor -> Maxim Integrated

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DS1245W-100

3.3V 1024k Nonvolatile SRAM

Dallas Semiconductor -> Maxim Integrated 

ABSOLUTE MAXIMUM RATINGS

Voltage on Any Pin Relative to Ground

Operating Temperature Range

Commercial:

Industrial:

Storage Temperature Range

EDIP

PowerCap

Lead Temperature (soldering, 10s)

Soldering Temperature (reflow, PowerCap)

Note: EDIP is wave or hand soldered only.

DS1245W

-0.3V to +4.6V

0°C to +70°C

-40°C to +85°C

-40°C to +85°C

-55°C to +125°C

+260°C

+260°C

This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation

sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect

reliability.

RECOMMENDED DC OPERATING CONDITIONS

PARAMETER

SYMBOL MIN TYP

Power Supply Voltage

VCC

3.0 3.3

Logic 1

VIH

2.2

Logic 0

VIL

0.0

(tA: See Note 10)

MAX UNITS NOTES

3.6

V

VCC

V

0.4

V

DC ELECTRICAL CHARACTERISTICS

฀฀0.3V)

PARAMETER

SYMBOL

Input Leakage Current

IIL

I/O Leakage Current CE ≥ VIH ≤ VCC

IIO

Output Current @ 2.2V

IOH

Output Current @ 0.4V

IOL

Standby Current CE =2.2V

ICCS1

Standby Current CE =VCC-0.2V

ICCS2

Operating Current

ICCO1

Write Protection Voltage

VTP

(tA: See Note 10) (VCC=3.3V

MIN

-1.0

-1.0

-1.0

2.0

2.8

TYP

50

30

2.9

MAX

+1.0

+1.0

250

150

50

3.0

UNITS

µA

µA

mA

mA

µA

µA

mA

V

NOTES

CAPACITANCE

(tA=25฀C)

PARAMETER

Input Capacitance

Input/Output Capacitance

SYMBOL

CIN

CI/O

MIN

TYP

5

5

MAX

10

10

UNITS

pF

pF

NOTES

4 of 10

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