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BTA202X Datasheet PDF : 12 Pages
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NXP Semiconductors
BTA202X series D and E
2 A Three-quadrant triacs high commutation
8. Dynamic characteristics
Table 7. Dynamic characteristics
Symbol Parameter
Conditions
dVD/dt
dIcom/dt
tgt
rate of rise of
off-state voltage
rate of change of
commutating
current
gate-controlled
turn-on time
VDM = 0.67 × VDRM(max); Tj = 125 °C;
exponential waveform; R(G-MT1) = 220 Ω
VDM = 400 V; Tj = 125 °C; IT(RMS) = 2 A;
dVcom/dt = 20 V/µs; gate open circuit
VDM = 400 V; Tj = 125 °C; IT(RMS) = 2 A;
dVcom/dt = 10 V/µs; gate open circuit
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
BTA202X-600D
BTA202X-800D
Min Typ Max
- 350 -
BTA202X-600E Unit
BTA202X-800E
Min Typ Max
- 500 - V/µs
1.0 -
- 2.0 -
- A/ms
1.2 -
- 2.3 -
- A/ms
-
2
-
-
2
- µs
1.6
VGT
VGT(25°C)
1.2
0.8
001aab101
3
IGT
IGT(25°C)
2
(1)
(2)
(3)
1
003aaa959
0.4
−50
0
50
100
150
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
0
−50
0
(3)
(2)
(1)
50
100 Tj (°C) 150
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function
of junction temperature
BTA202X_SER_D_E_1
Product data sheet
Rev. 01 — 7 February 2008
© NXP B.V. 2008. All rights reserved.
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