BTA208BD Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BTA208BD Datasheet PDF : 4 Pages
| |||
Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Objective specification
BTA208B series D, E and F
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
minimum footprint, FR4 board
junction to ambient
MIN.
-
-
-
TYP.
-
-
55
MAX.
2.0
2.4
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT
Gate trigger current2
IL
Latching current
IH
Holding current
VT
On-state voltage
VGT
Gate trigger voltage
ID
Off-state leakage current
CONDITIONS
BTA208B-
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
VD = 12 V;
IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
VD = 12 V; IGT = 0.1 A
IT = 10 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
VD = VDRM(max);
Tj = 125 ˚C
MIN.
2
2
2
-
-
-
-
-
-
0.25
-
TYP.
-
-
-
-
-
-
-
1.3
0.7
0.4
0.1
...D
5
5
5
6
9
6
6
1.65
MAX.
...E
10
10
10
12
18
12
12
1.65
1.5
-
0.5
...F
25
25
25
30
45
30
30
1.65
UNIT
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
BTA208B- ...D
...E ...F
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max);
Tj = 125 ˚C; exponential
waveform; gate open
10 20 50
circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 1.8 2.5 3.5
commutating current
IT(RMS) = 8 A;
dVcom/dt = 20v/µs; gate
open circuit
tgt
Gate controlled turn-on ITM = 12 A; VD = VDRM(max);
-
--
time
IG = 0.1 A; dIG/dt = 5 A/µs
TYP. MAX. UNIT
-
- V/µs
-
- A/ms
2
-
µs
2 Device does not trigger in the T2-, G+ quadrant.
September 1997
2
Rev 1.000
Share Link: 