BT151X-650R Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

BT151X-650R

Thyristors

Philips Electronics 

Philips Semiconductors

BT151X series

Thyristors

3. Ordering information

Table 2: Ordering information

Type number

Package

Name

Description

Version

BT151X-500

-

BT151X-650

plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A

3 lead TO-220 ‘full pack’

BT151X-800

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

VDRM, VRRM

repetitive peak off-state voltage

BT151X-500

[1] -

BT151X-650

[1] -

BT151X-800

-

IT(AV)

IT(RMS)

average on-state current

RMS on-state current

half sinewave;

-

Ths ≤ 69 °C; Figure 1

all conduction angles;

-

Figure 4 and Figure 5

ITSM

non-repetitive peak on-state current half sinewave;

Tj = 25 °C prior to

surge; Figure 2 and

Figure 3

t = 10 ms

-

t = 8.3 ms

-

I2t

I2t for fusing

t = 10 ms

-

dIT/dt

IGM

VRGM

PGM

PG(AV)

Tstg

Tj

repetitive rate of rise of on-state

ITM = 20 A; IG = 50 mA;

-

current after triggering

dIG/dt 50 mA/µs

peak gate current

-

peak reverse gate voltage

-

peak gate power

-

average gate power

over any 20 ms period

-

storage temperature

−40

junction temperature

-

Max

Unit

500

V

650

V

800

V

7.5

A

12

A

120

132

72

50

2

5

5

0.5

+150

125

A

A

A2s

A/µs

A

V

W

W

°C

°C

[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.

The rate of rise of current should not exceed 15 A/µs.

9397 750 13162

Product data sheet

Rev. 04 — 9 June 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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