BT151S Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BT151S Datasheet PDF : 6 Pages
| |||
Philips Semiconductors
Thyristors
Product specification
BT151S series
BT151M series
Ptot / W
15
conduction
angle
degrees
30
60
90
10
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
5
BT151
2.8
4
97.25 Tmb(max) / C 98
a = 1.57
1.9
2.2
107
116
0
125
0
1
2
3
4
5
6
7
8
IF(AV) / A
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
1000 ITSM / A
BT151
dIT/dt limit
100
IT
ITSM
T time
Tj initial = 25 C max
10
10us
100us
1ms
T/s
10ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
IT(RMS) / A
15
10
BT151
103 C
5
0-50
0
50
100
150
Tmb / C
Fig.3. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
ITSM / A
120
100
80
BT151
IT
ITSM
T time
Tj initial = 25 C max
60
40
20
01
10
100
1000
Number of half cycles at 50Hz
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
25
BT151
20
15
10
5
0
0.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 103˚C.
VGT(Tj)
1.6 VGT(25 C)
BT151
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.100
Share Link: 