BT139-500H Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

BT139-500H

Triacs high noise immunity

Philips Electronics 

Philips Semiconductors

Triacs

high noise immunity

Product specification

BT139 series H

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

Rth j-mb

Rth j-a

Thermal resistance

full cycle

junction to mounting base half cycle

Thermal resistance

in free air

junction to ambient

MIN.

-

-

-

TYP.

-

-

60

MAX.

1.2

1.7

-

UNIT

K/W

K/W

K/W

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER

IGT

Gate trigger current

IL

Latching current

IH

Holding current

VT

On-state voltage

VGT

Gate trigger voltage

ID

Off-state leakage current

CONDITIONS

VD = 12 V; IT = 0.1 A

T2+ G+

T2+ G-

T2- G-

T2- G+

VD = 12 V; IGT = 0.1 A

T2+ G+

T2+ G-

T2- G-

T2- G+

VD = 12 V; IGT = 0.1 A

IT = 20 A

VD = 12 V; IT = 0.1 A

VD = 400 V; IT = 0.1 A; Tj = 125 ˚C

VD = VDRM(max); Tj = 125 ˚C

MIN. TYP. MAX. UNIT

10 14 50 mA

10 17 50 mA

10 18 50 mA

10 40 100 mA

-

10 60 mA

-

25 90 mA

-

12 60 mA

-

14 90 mA

-

8

60 mA

-

1.2 1.6 V

-

0.7 1.5 V

0.25 0.4

-

V

-

0.1 0.5 mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

dVD/dt

dVcom/dt

tgt

Critical rate of rise of

off-state voltage

Critical rate of change of

commutating voltage

Gate controlled turn-on

time

VDM = 67% VDRM(max); Tj = 125 ˚C;

exponential waveform; gate open circuit

VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 16 A;

dIcom/dt = 7.2 A/ms; gate open circuit

ITM = 20 A; VD = VDRM(max); IG = 0.1 A;

dIG/dt = 5 A/µs

MIN.

200

10

-

TYP. MAX. UNIT

500

- V/µs

20

- V/µs

2

-

µs

September 1997

2

Rev 1.200

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