BT139-500G Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BT139-500G Datasheet PDF : 6 Pages
| |||
Philips Semiconductors
Triacs
Product specification
BT139 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
MIN.
-
-
-
TYP.
-
-
60
MAX.
1.2
1.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BT139-
... ...F ...G
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
T2+ G+
-
5
35 25 50 mA
T2+ G-
-
8
35 25 50 mA
T2- G-
-
10 35 25 50 mA
T2- G+
-
22 70 70 100 mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
-
7
40 40 60 mA
T2+ G-
-
20 60 60 90 mA
T2- G-
-
8
40 40 60 mA
T2- G+
-
10 60 60 90 mA
IH
Holding current
VD = 12 V; IGT = 0.1 A
-
6
30 30 60 mA
VT
On-state voltage
IT = 20 A
-
1.2
1.6
V
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A;
0.25 0.4
-
V
Tj = 125 ˚C
ID
Off-state leakage current VD = VDRM(max);
-
0.1
0.5
mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT139- ... ...F ...G
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max);
100 50 200 250
Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C;
-
commutating voltage
IT(RMS) = 16 A;
dIcom/dt = 7.2 A/ms; gate
open circuit
-
10 20
tgt
Gate controlled turn-on ITM = 20 A; VD = VDRM(max); -
-
-
2
time
IG = 0.1 A; dIG/dt = 5 A/µs
- V/µs
- V/µs
-
µs
September 1997
2
Rev 1.200
Share Link: 