BT137M-500 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BT137M-500 Datasheet PDF : 6 Pages
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Philips Semiconductors
Triacs
Product specification
BT137S series
BT137M series
IGT(Tj)
IGT(25 C)
3
2.5
2
BT137
T2+ G+
T2+ G-
T2- G-
T2- G+
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
TRIAC
2.5
2
1.5
1
0.5
0
-50
Fig.8.
0
50
100
150
Tj / C
Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
3 IH(25C)
TRIAC
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
25 IT / A
Tj = 125 C
Tj = 25 C
20
Vo = 1.264 V
Rs = 0.0378 Ohms
15
BT137
typ
max
10
5
0
0
0.5
1
1.5
2
2.5
3
VT / V
Fig.10. Typical and maximum on-state characteristic.
10 Zth j-mb (K/W)
BT137
unidirectional
1
bidirectional
0.1
P
D
tp
t
0.01
10us 0.1ms 1ms 10ms 0.1s
1s
10s
tp / s
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
1000 dV/dt (V/us)
100
off-state dV/dt limit
BT137...G SERIES
BT137 SERIES
BT137...F SERIES
dIcom/dt =
10 A/ms
10
7.9 6.1 4.7 3.6 2.8
1
0
50
100
150
Tj / C
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
October 1997
4
Rev 1.200
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