BT137M-500 Ver la hoja de datos (PDF) - Philips Electronics
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BT137M-500 Datasheet PDF : 6 Pages
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Philips Semiconductors
Triacs
Product specification
BT137S series
BT137M series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
Rth j-mb
Rth j-a
Thermal resistance
full cycle
-
junction to mounting base half cycle
-
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14 -
junction to ambient
TYP.
-
-
75
MAX.
2.0
2.4
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BT137S-(or BT137M)
... ...F ...G
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
T2+ G+
-
5
35 25 50 mA
T2+ G-
-
8
35 25 50 mA
T2- G-
-
11 35 25 50 mA
T2- G+
-
30 70 70 100 mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
-
7
30 30 45 mA
T2+ G-
-
16 45 45 60 mA
T2- G-
-
5
30 30 45 mA
T2- G+
-
7
45 45 60 mA
IH
Holding current
VD = 12 V; IGT = 0.1 A
-
5
20 20 40 mA
VT
On-state voltage
IT = 10 A
-
1.3
1.65
V
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A;
0.25 0.4
-
V
Tj = 125 ˚C
ID
Off-state leakage current VD = VDRM(max);
-
0.1
0.5
mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT137S-(or BT137M) ... ...F ...G
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max);
100 50 200 250
Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C;
-
commutating voltage
IT(RMS) = 8 A;
dIcom/dt = 3.6 A/ms; gate
open circuit
-
10 20
tgt
Gate controlled turn-on ITM = 12 A; VD = VDRM(max); -
-
-
2
time
IG = 0.1 A; dIG/dt = 5 A/µs
- V/µs
- V/µs
-
µs
October 1997
2
Rev 1.200
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