Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
í•œêµì–´
日本語
руÑÑкий
简体ä¸æ–‡
español
Número de pieza
componentes Descripción
BSS127 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSS127
SIPMOS® Small-Signal-Transistor
Infineon Technologies
BSS127 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
13 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=0.01 A pulsed
parameter:
V
DD
6
5
4
3
0.5 VBR(DSS)
2
0.2 VBR(DSS)
1
0.8 VBR(DSS)
0
0
1
2
3
-1
-2
-3
-4
Q
gate
[nC]
14 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=250 µA
BSS127
700
680
660
640
620
600
580
4
560
540
520
500
-60
-20
20
60
100 140
T
j
[°C]
Rev. 1.1
page 7
2006-03-24
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]