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Número de pieza
componentes Descripción
BSS126(2006) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSS126
(Rev.:2006)
SIPMOS® Small-Signal-Transistor
Infineon Technologies
BSS126 Datasheet PDF : 9 Pages
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13 Forward characteristics of reverse diode
I
F
=f(
V
SD
)
parameter:
T
j
0.1
150 °C
25 °C
BSS126
15 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=0.1 A pulsed
parameter:
V
DD
6
0.2 VDS(max) 0.5 VDS(max)
5
4
150 °C, 98%
3
0.8 VDS(max)
25 °C, 98%
2
0.01
1
0
-1
-2
-3
0.001
-4
0
0.5
1
1.5
2
2.5
0
0.4
0.8
1.2
1.6
V
SD
[V]
Q
gate
[nC]
16 Drain-source breakdown voltage
I
D
=f(
V
GS
);
V
DS
=3 V;
T
j
=25 °C
700
660
620
580
540
500
-60 -20
20
60 100 140 180
T
j
[°C]
Rev. 1.3
page 7
2006-06-14
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