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Número de pieza
componentes Descripción
BSS126(2006) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSS126
(Rev.:2006)
SIPMOS® Small-Signal-Transistor
Infineon Technologies
BSS126 Datasheet PDF : 9 Pages
1
2
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5
6
7
8
9
Parameter
Dynamic characteristics
I
D
=f(
V
GS
);
V
DS
=3 V;
T
j
=25 °C
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
BSS126
min.
Values
typ.
Unit
max.
C
iss
-
C
oss
V
GS
=-5 V,
V
DS
=25 V,
f
=1 MHz
-
C
rss
-
t
d(on)
-
t
r
V
DD
=300 V,
-
V
GS
=-3…7 V,
t
d(off)
I
D
=0.01 A,
R
G
=6
Ω
-
t
f
-
21
28 pF
2.4
3.2
1.0
1.5
6.1
9.2 ns
9.7
14.5
14
21
115
170
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=400 V,
I
D
=10 mA,
V
GS
=-3 to 5 V
-
0.05 0.08 nC
-
1.2
1.8
-
1.4
2.1
-
0.10
-V
I
S
-
T
A
=25 °C
I
S,pulse
-
V
SD
V
GS
=-5 V,
I
F
=16 mA,
T
j
=25 °C
-
t
rr
V
R
=300 V,
I
F
=0.01 A,
-
Q
rr
d
i
F
/d
t
=100 A/µs
-
-
0.016 A
-
0.064
0.81
1.2 V
160
240 ns
13.2 19.8 nC
Rev. 1.3
page 3
2006-06-14
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