BSS80 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSS80

PNP Silicon Switching Transistors

Infineon Technologies 

PNP Silicon Switching Transistors

High DC current gain: 0.1mA to 500 mA

Low collector-emitter saturation voltage

Complementary types: BSS79, BSS81 (NPN)

BSS80, BSS82

3

2

1 VPS05161

Type

BSS80B

BSS80C

BSS82B

BSS82C

Marking

CHs

CJs

CLs

CMs

1=B

1=B

1=B

1=B

Pin Configuration

2=E

3=C

2=E

3=C

2=E

3=C

2=E

3=C

Package

SOT23

SOT23

SOT23

SOT23

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

DC collector current

Peak collector current

Base current

Peak base current

Total power dissipation, TS = 77 °C

Junction temperature

Storage temperature

Symbol

VCEO

VCBO

VEBO

IC

ICM

IB

IBM

Ptot

Tj

Tstg

BSS80 BSS82

40

60

60

5

800

1

100

200

330

150

-65 ... 150

Thermal Resistance

Junction - soldering point1)

RthJS

220

1For calculation of RthJA please refer to Application Note Thermal Resistance

Unit

V

V

mA

A

mA

mW

°C

K/W

1

Nov-30-2001

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