BSS806N(2011) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSS806N
(Rev.:2011)

OptiMOS™2 Small-Signal-Transistor

Infineon Technologies 

Parameter

Thermal characteristics

Thermal resistance,

junction - ambient

Symbol Conditions

BSS806N

min.

Values

typ.

Unit

max.

R thJA minimal footprint 1)

-

-

250 K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS= 0 V, I D= 250 µA

20

-

-V

Gate threshold voltage

Drain-source leakage current

Gate-source leakage current

Drain-source on-state resistance

Transconductance

V GS(th) V DS=VGS , I D=11 µA

0.3

I DSS

V DS=20 V, V GS=0 V,

T j=25 °C

-

V DS=20 V, V GS=0 V,

T j=150 °C

-

I GSS

V GS=8 V, V DS=0 V

-

R DS(on) V GS=1.8 V, I D=1.3 A

-

V GS=2.5 V, I D=2.3 A

-

g fs

|V DS|>2|I D|R DS(on)max,

I D=1.9 A

0.55 0.75

-

1 μA

-

100

-

100 nA

57

82 mΩ

41

57

9

-S

1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides

of the PCB.

Rev 2.3

page 2

2011-07-11

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