BSS295 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
BSS295 Datasheet PDF : 7 Pages
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BSS 295
Drain-source on-resistance
RDS (on) = Æ’(Tj)
parameter: ID = 1.4 A, VGS = 10 V
Gate threshold voltage
VGS (th) = Æ’(Tj)
parameter: VGS = VDS, ID = 1 mA
0.75
4.6
Ω
V
0.65
4.0
RDS (on)0.60
0.55
0.50
VGS(th) 3.6
3.2
0.45
2.8
0.40
98%
0.35
typ
0.30
0.25
2.4
98%
2.0
1.6
typ
0.20
0.15
0.10
0.05
0.00
-60
-20
20
60
100 °C 160
Tj
1.2
2%
0.8
0.4
0.0
-60
-20
20
60
100 °C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode
IF = Æ’(VSD)
parameter: Tj, tp = 80 µs
10 1
pF
C
10 2
Ciss
Coss
Crss
A
IF
10 0
10 1
10 0
0
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -2
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
12/05/1997
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