Q67000-S105 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
Q67000-S105 Datasheet PDF : 7 Pages
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BSS 295
Typ. output characteristics
ID = Æ’(VDS)
parameter: tp = 80 µs , Tj = 25 °C
3.2
Ptot =ljkihg1fWe
A
ID
2.4
2.0
1.6
1.2
0.8
VGS [V]
a
2.0
db
2.5
c
3.0
d
3.5
e
4.0
f
4.5
g
5.0
c
h
6.0
i
7.0
j
8.0
k
9.0
bl
10.0
0.4
a
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VDS
Typ. drain-source on-resistance
RDS (on) = Æ’(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.9
a
b
c
Ω
RDS (on) 0.7
0.6
0.5
0.4
d
e
0.3
f
j hikg
0.2
0.1
VGS [V] =
ab
2.50 3.0
0.0
0.0 0.4
cd
3.5 4.0
0.8
ef g
4.5 5.0 6.0
1.2 1.6
hi
7.0 8.0
2.0
jk
9.0 10.0
A 2.8
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
VDS≥ 2 x ID x RDS(on)max
4.5
A
ID
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
2.2
S
gfs
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 A 4.0
ID
Semiconductor Group
6
12/05/1997
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