Q67000-S105 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
Q67000-S105 Datasheet PDF : 7 Pages
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BSS 295
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJA
Values
Unit
-55 ... + 150 °C
-55 ... + 150
≤ 125
K/W
E
55 / 150 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 125 °C
VDS = 30 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 1.4 A
VGS = 4.5 V, ID = 1.4 A
V(BR)DSS
50
VGS(th)
0.8
IDSS
-
-
-
IGSS
-
RDS(on)
-
-
V
-
-
1.4
2
0.1
1
µA
8
50
-
100
nA
nA
10
100
Ω
0.25
0.3
0.45
0.5
Semiconductor Group
2
12/05/1997
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