BSS169 Ver la hoja de datos (PDF) - Siemens AG

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Fabricante

BSS169

SIPMOS® Small-Signal Transistor

Siemens AG 

SIPMOS ® Small-Signal Transistor

• N channel

• Depletion mode

• High dynamic resistance

BSS 169

Preliminary data

Pin 1

G

Pin 2

S

Pin 3

D

Type

BSS 169

VDS

100 V

ID

0.12 A

RDS(on)

12 Ω

Package

SOT-23

Maximum Ratings

Parameter

Drain source voltage

Drain-gate voltage

RGS = 20 kΩ

Gate source voltage

Gate-source peak voltage, aperiodic

Continuous drain current

TA = 25 °C

DC drain current, pulsed

TA = 25 °C

Power dissipation

TA = 25 °C

Chip or operating temperature

Storage temperature

Thermal resistance, chip to ambient air

Therminal resistance, chip-substrate - reverse side 1)

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

VDS

VDGR

VGS

Vgs

ID

IDpuls

Ptot

Tj

Tstg

RthJA

RthJSR

Ordering Code

Q67050-T7

Values

Unit

100

V

100

± 14

± 20

A

0.12

0.36

W

0.36

-55 ... + 150 °C

-55 ... + 150

≤ 350

K/W

≤ 285

E

55 / 150 / 56

1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm.

Semiconductor Group

1

May-30-1996

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