2N603L Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

2N603L

OptiMOS Power-Transistor

Infineon Technologies 

BSP603S2L

Electrical Characteristics

Parameter

Dynamic Characteristics

Transconductance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Reverse Diode

Inverse diode continuous

forward current

Inv. diode direct current, pulsed

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

Symbol

Conditions

Values

Unit

min. typ. max.

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS≥2*ID*RDS(on)max, 8.9 17.8

-S

ID=5.2

VGS=0V, VDS=25V,

f=1MHz

- 1034 1390 pF

- 244 325

-

75 110

VDD=30V, VGS=4.5V,

-

10.8 16 ns

ID=5.2A,

RG=5.6Ω

VDD=30V, VGS=4.5V,

-

ID=5.2mA,

-

RG=5.6Ω

-

16 24

28 40

15 23

Qgs

Qgd

VDD=44V, ID=5.2A

Qg

VDD=44V, ID=5.2A,

VGS=0 to 10V

V(plateau) VDD=44V, ID=5.2A

- 3.5 4.6 nC

- 10.6 16

-

31 42

-

3

-V

IS

ISM

VSD

trr

Qrr

TA=25°C

VGS=0V, IF=5.2A

VR=30V, IF=lS,

diF/dt=100A/µs

-

- 5.2 A

-

-

21

- 0.8 1.1 V

- 46 58 ns

- 44 55 nC

Page 3

2003-10-29

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