Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
í•œêµì–´
日本語
руÑÑкий
简体ä¸æ–‡
español
Número de pieza
componentes Descripción
BSP317PL6327 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSP317PL6327
SIPMOS® Small-Signal-Transistor
Infineon Technologies
BSP317PL6327 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
13 Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D
= -0.43 A pulsed,
T
j
= 25°C
BSP 317 P
-16
V
-12
-10
-8
-6
-4
20%
50%
-2
80%
0
0 2 4 6 8 10 12 14
nC
18
|Q
G
|
BSP317P
14 Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
BSP 317 P
-300
V
-285
-280
-275
-270
-265
-260
-255
-250
-245
-240
-235
-230
-225
-60 -20
20
60 100
°C
180
T
j
Rev.2.
1
Page 7
2011Â04Â19
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]