BSP317P Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSP317P

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

BSP317P

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

Dynamic Characteristics

Transconductance

gfs

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

min. typ. max.

|VDS|≥2*|ID|*RDS(on)max , 0.38

ID=-0.34A

VGS=0, VDS=-25V,

-

f=1MHz

-

-

VDD=-30V, VGS=-10V,

-

ID=-0.43A, RG=6Ω

-

-

-

0.76

210

30

13.4

5.7

11.1

254

67

-S

262 pF

37

16.7

8.5 ns

16.6

381

100

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Qgs

Qgd

Qg

VDD=-200V, ID=-0.43A

VDD=-200V, ID=-0.43A,

VGS=0 to -10V

Gate plateau voltage

V(plateau) VDD=-200V, ID=-0.43A

- -0.5 -0.65 nC

-

-4 -5.2

- -11.6 -15.1

- -2.8 - V

Reverse Diode

Inverse diode continuous

IS

forward current

Inv. diode direct current, pulsed ISM

Inverse diode forward voltage VSD

Reverse recovery time

trr

Reverse recovery charge

Qrr

TA=25°C

VGS=0, IF=-0.43A

VR=-125V, IF=lS,

diF /dt=100A/µs

-

- -0.43 A

-

- -1.72

- -0.84 -1.2 V

-

92 138 ns

- 210 315 nC

Rev.2.1

Page 3

2011­04­19

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