BSP317P Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSP317P

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - soldering point

(Pin 4)

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

BSP317P

Symbol

Values

Unit

min. typ. max.

RthJS

-

15 25 K/W

RthJA

-

80 115

-

48 70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V(BR)DSS -250

-

-V

VGS=0, ID=-250µA

Gate threshold voltage, VGS = VDS

VGS(th)

-1

-1.5 -2

ID =-370µA

Zero gate voltage drain current

VDS=-250V, VGS=0, Tj=25°C

VDS=-250V, VGS=0, Tj=150°C

IDSS

µA

- -0.1 -0.2

- -10 -100

Gate-source leakage current

IGSS

-

-10 -100 nA

VGS=-20V, VDS=0

Drain-source on-state resistance

VGS=-4.5V, ID=-0.39A

Drain-source on-state resistance

RDS(on)

-

3.3

5Ω

RDS(on)

-

3

4

VGS=-10V, ID=-0.43A

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Rev.2.1

Page 2

2011­04­19

Share Link: