BSP317PL6327 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSP317PL6327

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

SIPMOS Small-Signal-Transistor

Feature

• P-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

x Qualified according to AEC Q101

BSP317P

Product Summary

VDS

-250 V

RDS(on)

4

Ω

ID

-0.43 A

PG-SOT223

Gate

pin1

Drain

pin 2/4

4

Source

pin 3

3

2

1

VPS05163

Type

Package

BSP317P PG-SOT223

Tape and Reel Information Marking Packaging

L6327: 1000 pcs/reel

BSP317P Non dry

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TA=25°C

TA=70°C

Pulsed drain current

TA=25°C

Reverse diode dv/dt

ID puls

dv/dt

IS=-0.43A, VDS=-200V, di/dt=-200A/µs, Tjmax=150°C

Gate source voltage

Power dissipation

TA=25°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

VGS

Ptot

Tj , Tstg

Value

-0.43

-0.34

-1.72

6

±20

1.8

-55... +150

55/150/56

Unit

A

kV/µs

V

W

°C

Rev.12..651

Page 1

2011­04­19

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