BSP317PH6327(2012) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSP317PH6327
(Rev.:2012)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

13 Typ. gate charge

VGS = f (QGate)

parameter: ID = -0.43 A pulsed, Tj = 25°C

BSP 317 P

-16

V

-12

-10

-8

-6

-4

20%

50%

-2

80%

0

0 2 4 6 8 10 12 14 nC 18

|QG|

BSP317P

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

BSP 317 P

-300

V

-285

-280

-275

-270

-265

-260

-255

-250

-245

-240

-235

-230

-225

-60 -20

20

60 100 °C

180

Tj

Rev.2.4

Page 7

2012­04­02

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