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Número de pieza
componentes Descripción
BSP317P(2002) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSP317P
(Rev.:2002)
SIPMOS® Small-Signal-Transistor
Infineon Technologies
BSP317P Datasheet PDF : 8 Pages
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Preliminary data
BSP 317 P
13 Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D
= -0.43 A pulsed,
T
j
= 25°C
BSP 317 P
-16
V
14 Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
BSP 317 P
-300
V
-12
-10
-8
-6
-4
20%
50%
-2
80%
0
0 2 4 6 8 10 12 14
nC
18
|Q
G
|
-285
-280
-275
-270
-265
-260
-255
-250
-245
-240
-235
-230
-225
-60 -20
20
60 100
°C
180
T
j
Page 7
2002-07-17
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