BSP317PH6327(2012) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSP317PH6327
(Rev.:2012)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

BSP317P

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj =25°C, -VGS

1.6

10V

A 5V

4.4V

3.6V

3.2V

1.2 2.8V

2.4V

1 2.2V

0.8

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: VGS; Tj =25°C, -VGS

10

Ω

2.2V

8

2.4V

2.8V

3.2V

7

3.6V

4.4V

6

5V

10V

5

4

0.6

3

0.4

2

0.2

1

0

0 0.5 1 1.5 2 2.5 3 3.5 4 V 5

-VDS

0

0 0.2 0.4 0.6 0.8 1 1.2 A 1.6

-ID

7 Typ. transfer characteristics

8 Typ. forward transconductance

ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max

parameter: Tj = 25 °C

gfs = f(ID)

parameter: Tj =25°C

1.6

1.4

S

A

1.2

1.1

1.2

1

1

0.9

0.8

0.8

0.7

0.6

0.6

0.5

0.4

0.4

0.3

0.2

0.2

0.1

0

0 0.4 0.8 1.2 1.6 2 2.4 2.8 V 3.6

-VGS

0

0 0.2 0.4 0.6 0.8 1 1.2 A 1.6

-ID

Rev.2.4

Page 5

2012­04­02

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