BSP317P(2002) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSP317P
(Rev.:2002)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Preliminary data

BSP 317 P

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = -0.43 A, VGS = -10 V

BSP 317 P

11

Ω

9

8

7

6

5

98%

4

3

typ

2

1

0

-60 -20

20

60 100 °C

180

Tj

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0, f=1 MHz, Tj = 25°C

10 3

10 Typ. gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS

2.4

V

98%

2

1.8

typ.

1.6

1.4

1.2

2%

1

0.8

0.6

0.4

0.2

0

-60

-20

20

60

100 °C 160

Tj

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj

-10 1 BSP 317 P

pF

Ciss

A

10 2

-10 0

Coss

Crss

10 1

10 0

0 4 8 12 16 20 24 28 V 36

-VDS

-10 -1

-10 -2

0

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

-0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3

VSD

Page 6

2002-07-17

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