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Número de pieza
componentes Descripción
BSP317P(2002) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSP317P
(Rev.:2002)
SIPMOS® Small-Signal-Transistor
Infineon Technologies
BSP317P Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
Preliminary data
BSP 317 P
1 Power dissipation
P
tot
=
f
(
T
A)
BSP 317 P
1.9
W
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120
°C
160
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25°C
-10
1
BSP 317 P
A
-10
0
t
p
= 140.0µs
1 ms
2 Drain current
I
D
=
f
(
T
A)
parameter: |
V
GS
|
≥
10V
-0.5
BSP 317 P
A
-0.4
-0.35
-0.3
-0.25
-0.2
-0.15
-0.1
-0.05
0
0 20 40 60 80 100 120
°C
160
T
A
4 Transient thermal impedance
Z
thJA
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
2
BSP 317 P
K/W
10
1
10
0
-10
-1
-10
-2
10 ms
DC
10
-1
10
-2
10
-3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
-10
-3
-10
-1
-10
0
-10
1
-10
2
V
-10
3
V
DS
Page 4
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
2002-07-17
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