BSP316P(2007) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSP316P
(Rev.:2007)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = -0.68 A, VGS = -10 V

5 BSP 316 P

Ω

4

3.5

3

2.5

98%

2

1.5

typ

1

0.5

0

-60 -20

20

60 100 °C

180

Tj

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0, f=1 MHz, Tj = 25 °C

10 3

pF

Ciss

10 2

Coss

BSP 316 P

10 Typ. gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS

2.4

V

98%

2

1.8

typ.

1.6

1.4

1.2

2%

1

0.8

0.6

0.4

0.2

0

-60

-20

20

60

100 °C 160

Tj

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj

-10 1 BSP 316 P

A

-10 0

Crss

10 1

10 0

0 4 8 12 16 20 24 28 V 36

-VDS

-10 -1

-10 -2

0

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

-0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3

VSD

Rev.1.5

Page 6

2007-02-23

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