BSP16T1(2004) Ver la hoja de datos (PDF) - ON Semiconductor
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BSP16T1 Datasheet PDF : 4 Pages
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BSP16T1
Preferred Device
High Voltage Transistors
PNP Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TA = 25°C
(Note 1)
VCEO
VCBO
VEBO
IC
PD
−300
−350
−6.0
−1000
1.5
Vdc
Vdc
Vdc
mAdc
W
Storage Temperature Range
PD
−65 to
°C
+150
Junction Temperature
TJ
150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
83.3
°C/W
1. Device mounted on a glass epoxy printed circuit board 1.575 in x 1.575 in x
0.059 in; mounting pad for the collector lead min. 0.93 sq. in.
http://onsemi.com
PNP SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
MARKING
DIAGRAM
1
2
3
4
TO−223
CASE 318E
STYLE 1
BT2D
BT2 = Specific Device Code
D
= Date
ORDERING INFORMATION
Device
Package
Shipping†
BSP16T1
TO−223 1000/Tape & Reel
BSP16T1G
TO−223 1000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 5
Publication Order Number:
BSP16T1/D
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