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BSP223 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza
componentes Descripción
Fabricante
BSP223 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Preliminary data
BSP 223
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = 0.38 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RG = 50 Ω
Rise time
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RG = 50 Ω
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RG = 50 Ω
Fall time
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RG = 50 Ω
Gate charge at threshold
VDD = 40 V, ID ≥ 0.1 A, VGS 0 to 1 V
Gate Charge at 7.0 V
VDD = 40 V, ID = 0.4 A, VGS 0 to 7 V
Gate Charge total
VDD = 40 V, ID = 0.4 A, VGS 0 to 10 V
Gate plateau voltage
VDS = 15 V, ID = 0.4 A
gfs
0.2
Ciss
-
Coss
-
Crss
-
td(on)
-
tr
-
td(off)
-
tf
-
Qg(th)
-
Qg(7)
-
Qg(total)
-
V(plateau)
-
Semiconductor Group
3
Values
Unit
typ.
max.
S
0.8
-
pF
300
400
40
60
15
25
ns
8
12
12
18
45
65
25
40
nC
0.4
0.6
13
20
16
25
V
4.4
-
25/09/1997

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