Preliminary data
BSP 223
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air 1)
Thermal resistance, junction-soldering point 1)
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJA
RthJS
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Values
Unit
-55 ... + 150 °C
-55 ... + 150
≤ 70
K/W
≤ 10
55 / 150 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
VDS = 600 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.38 A
V(BR)DSS
600
-
VGS(th)
2.1
3
IDSS
-
0.1
-
10
IGSS
-
10
RDS(on)
-
4
V
-
4
µA
1
100
nA
100
Ω
5
Semiconductor Group
2
25/09/1997