BS804B Ver la hoja de datos (PDF) - Holtek Semiconductor
Número de pieza
componentes Descripción
Fabricante
BS804B Datasheet PDF : 21 Pages
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BS801B/02B/04B/06B/08B
Absolute Maximum Ratings
Supply Voltage ..........................VSS-0.3V to VSS+6.0V
Input Voltage .............................VSS-0.3V to VDD+0.3V
IOL Total ................................................................80mA
Total Power Dissipation .....................................500mW
Storage Temperature ...........................-50°C to 125°C
Operating Temperature ..........................-40°C to 85°C
IOH Total..............................................................-80mA
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed
in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.
D.C. Characteristics
BS801B
Symbol
Parameter
VDD
Operating Voltage
ISTB
Standby Current
IDD
Operating Current
VIH
Input High Voltage
VIL
Input Low Voltage
IOL
Sink Current
RPH
Pull-high Resistance
Test Conditions
VDD
Conditions
¾
¾
3V No load
3V No load
¾
¾
¾
¾
3V VOL=0.1VDD
3V
¾
Ta=25°C
Min. Typ. Max. Unit
2.2
¾
5.5
V
¾
1.5
2.5
mA
¾
3
6
mA
0.7VDD
¾
VDD
V
0
¾
0.3VDD
V
4
8
¾
mA
20
60
100
kW
BS802B
Symbol
Parameter
VDD
Operating Voltage
ISTB
Standby Current, Any Key
Wake-up
IDD
Operating Current
VIH
Input High Voltage
VIL
Input Low Voltage
IOL
Sink Current
RPH
Pull-high Resistance
Test Conditions
VDD
Conditions
¾
¾
3V No load
3V No load
¾
¾
¾
¾
3V VOL=0.1VDD
3V
¾
Ta=25°C
Min. Typ. Max. Unit
2.2
¾
5.5
V
¾
2
3
mA
¾
5
10
mA
0.7VDD
¾
VDD
V
0
¾
0.3VDD
V
4
8
¾
mA
20
60
100
kW
Rev. 1.00
3
July 7, 2009
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