TN2404K Ver la hoja de datos (PDF) - Vishay Semiconductors
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TN2404K Datasheet PDF : 5 Pages
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TN2404K/TN2404KL/BS107KL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
1
TJ = −55_C
0.1
On-Resistance vs. Gate-to-Source Voltage
8
ID = 100 mA
7
6
ID = 50 mA
5
4
TJ = 25_C
0.01
TJ = 150_C
3
2
ID = 10 mA
1
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD − Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
Threshold Voltage
0.3
0.2
0.1
−0.0
ID = 250 mA
−0.1
−0.2
−0.3
−0.4
−0.5
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN2404K Only)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA =350_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
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4
Document Number: 72225
S-41761—Rev. B , 04-Oct-04
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