BS107KL Ver la hoja de datos (PDF) - Vishay Semiconductors
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BS107KL Datasheet PDF : 5 Pages
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TN2404K/TN2404KL/BS107KL
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Limits
Min
Typa
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-Resistanceb
Forward Transconductanceb
Diode Forward Voltage
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = 100 mA
240
VDS = VGS, ID = 250 mA
0.8
VDS = 0 V, VGS = "20 V
VDS = 192 V, VGS = 0 V
TJ = 55_C
VDS = 10 V, VGS =10 V
0.8
VDS = 10 V, VGS = 4.5 V
0.5
VGS = 10 V, ID = 0.3 A
VGS = 4.5 V, ID = 0.2 A
VGS = 2.5 V, ID = 0.1 A
VDS = 10 V, ID = 0.3 A
IS = 0.3 A, VGS = 0 V
257
1.65
2.2
2.3
2.4
1.6
0.8
V
2.0
"100
nA
1
mA
10
A
4
4
W
6
S
1.2
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
turn-Off Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tr
VDS = 192 V, VGS = 10 V, ID = 0.5 A
VDD = 60 V, RL = 200 W
ID ] 0.3 A, VGEN = 10 V, RG = 25 W
4.87
8
0.56
nC
1.53
5
10
12
20
nS
35
60
16
25
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72225
S-41761—Rev. B , 04-Oct-04
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