BR24C21FV Ver la hoja de datos (PDF) - ROHM Semiconductor
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BR24C21FV Datasheet PDF : 21 Pages
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Datasheet
Standard EEPROMs
Plug & Play EEPROMs
(for Display)
BR24C21xxx Series (1K)
●General Description
BR24C21F,BR24C21FJ,BR24C21FV are serial EEPROMs that support DDC1TM/DDC2TM interfaces for Plug and Play
displays
●Features
Compatible with both DDC1TM/DDC2TM
Operating voltage range: 2.5V to 5.5V
Page write function: 8bytes
Low power consumption
¾ Active (at 5V) : 1.5mA (typ)
¾ Stand-by (at 5V) : 0.1µA (typ)
Address auto increment function during Read
operation
Data security
¾ Write enable feature (VCLK)
¾ Write protection at low Vcc
Initial data=FFh
Data retention: 10years
Rewriting possible up to 100,000 times
●Packages W(Typ.) x D(Typ.) x H(Max.)
DIP-T8
9.30mm x 6.50mm x 7.10mm
SOP8
5.00mm x 6.20mm x 1.71mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
●BR24C21xxx series
Capacity
Type
1Kbit
BR24C21
Power source Voltage
2.5V to 5.5V
DIP-T8
●
SOP8
●
SOP-J8 SSOP-B8
●
●
●Absolute Maximum Ratings
Parameter
Symbol
Supply Voltage
VCC
Power Dissipation
Pd
Storage Temperature
Tstg
Operating Temperature Topr
Terminal Voltage
‐
●Memory cell characteristics
Parameter
Write/Erase Cycle
Data Retention
Ratings
-0.3 to +6.5
800(DIP-T8)
450 (SOP8)
450 (SOP-J8)
350(SSOP-B8)
-65 to +125
-40 to +85
-0.3 to Vcc+0.3
Unit
V
mW
℃
℃
V
Remarks
When using at Ta=25℃ or higher 8.0mW to be reduced per 1℃.
When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.5mW to be reduced per 1℃.
Min.
100,000
10
Limits
Typ.
－
－
Unit
Max
－ Times
－ Years
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product is not designed protection against radioactive rays
1/18
TSZ02201-0R2R0G100270-1-2
10.Jul.2012 Rev.001
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