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BLW98

UHF linear power transistor

Philips Electronics 

Philips Semiconductors

UHF linear power transistor

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector-emitter breakdown voltage

VBE = 0; IC = 10 mA

open base, IC = 25 mA

Emitter-base breakdown voltage

open collector, IE = 5 mA

D.C. current gain(1)

IC = 850 mA; VCE = 25 V

Collector-emitter saturation voltage(1)

IC = 500 mA; IB = 100 mA

Transition frequency at f = 500 MHz(2)

−IE = 850 mA; VCB = 25 V

Collector capacitance at f = 1 MHz

IE = Ie = 0; VCB = 25 V

Feedback capacitance at f = 1 MHz

IC = 50 mA; VCE = 25 V

Collector-stud capacitance

Notes

1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.

2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.

10

handbook, halfpage

IC

(A)

1

Th = 70 °C

MGP720

25 °C

10−1

10−2

0.5

1

1.5 VBE (V) 2

Fig.5 Typical values; VCE = 25 V.

August 1986

5

Product specification

BLW98

V(BR)CES >

V(BR)CEO >

50 V

27 V

V(BR)EBO >

3,5 V

hFE

>

15

typ. 40

VCEsat

fT

Cc

typ. 0,25 V

typ. 2,5 GHz

typ. 24 pF

<

30 pF

Cre

typ. 15 pF

Ccs

typ. 1,2 pF

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