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BLW98

UHF linear power transistor

Philips Electronics 

Philips Semiconductors

UHF linear power transistor

DESCRIPTION

N-P-N silicon planar epitaxial

transistor primarily intended for use in

linear u.h.f. amplifiers of TV

transposers and transmitters in band

IV-V, as well as for driver stages in

tube systems.

FEATURES:

• diffused emitter ballasting resistors

for an optimum temperature profile;

• gold sandwich metallization

ensures excellent reliability.

The transistor has a 1⁄4" capstan

envelope with ceramic cap. All leads

are isolated from the stud.

Product specification

BLW98

QUICK REFERENCE DATA

R.F. performance in linear amplifier

MODE OF OPERATION

class-A

class-A

fvision

MHz

860

860

VCE

IC

Th

dim(1) Po sync (1)

Gp

V

mA

°C

dB

W

dB

25

850

70 −60 > 3,5 > 6,5

25

850

25 −60 typ. 4,4 typ. 7,0

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to

peak sync level.

PIN CONFIGURATION

handbook, halfpage

4

1

3

PINNING - SOT122A.

PIN

DESCRIPTION

1 collector

2 emitter

3 base

4 emitter

Top view

2

MBK187

Fig.1 Simplified outline. SOT122A.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.

August 1986

2

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