BLW898 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BLW898 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF linear power transistor
Product specification
BLW898
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter class-A test circuit.
MODE OF
f
VCE
OPERATION
(MHz)
(V)
CW class-A
860
25
CW class-A
860
25
ICQ
Po sync
(A)
(W)
1.1
≥3(1)
1.1
≥3(2)
Gp
(dB)
≥9(1)
≥9(2)
dim
(dB)
<−63(1)
<−60(2)
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −10 dB, sideband signal −16 dB), 0 dB corresponds to
peak sync level.
2. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), 0 dB corresponds to
peak sync level.
Ruggedness in class-A operation
The BLW898 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases, under the
conditions: VCE = 25 V; ICQ = 1.1 A; Th = 25 °C; f = 860 MHz; Po sync = 3 W.
30
handbook, halfpage
Po sync
(W)
20
MGD534
(1)
(2)
12
handbook, halfpage
(1)
Gp
(dB)
(2)
8
MGD535
10
4
0
0
1
2
3
4
Pi sync (W)
VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.5 Output power as a function of input power;
typical values.
0
0
10
20
30
Po sync (W)
VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.6 Power gain as a function of output power;
typical values.
1996 Jul 16
5
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