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BLW898

UHF linear power transistor

Philips Electronics 

Philips Semiconductors

UHF linear power transistor

Product specification

BLW898

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

hFE

Cc

collector-base breakdown voltage

collector-emitter breakdown voltage

emitter-base breakdown voltage

collector-base leakage current

collector-emitter leakage current

DC current gain

collector capacitance

Cre

feedback capacitance

CONDITIONS

MIN.

IC = 15 mA; IE = 0

60

IC = 30 mA; IB = 0

28

IE = 0.6 mA; IC = 0

2.5

VBE = 0; VCB = 28 V

−

VCE = 20 V

−

VCE = 25 V; IC = 1.1 A

30

VCB = 25 V; IE = ie = 0;

−

f = 1 MHz

VCB = 25 V; IC = 0; f = 1 MHz −

TYP.

−

−

−

−

−

−

18

11

MAX. UNIT

−

V

−

V

−

V

1.5 mA

3

mA

140

−

pF

−

pF

handboo1k,6h0alfpage

hFE

120

MGD532

80

40

0

0

1

2

3

IC (A)

VCE = 25 V; tp = 500 µs; δ = <1 %.

Fig.3 DC current gain as a function of collector

current; typical values.

handbook,6h0alfpage

Cc

(pF)

40

MGD533

20

0

0

10

20

30

40

VCB (V)

IE = ie = 0; f = 1 MHz.

Fig.4 Collector capacitance as a function of

collector-base voltage; typical values.

1996 Jul 16

4

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