BLW83 Ver la hoja de datos (PDF) - Philips Electronics

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Fabricante

BLW83

HF/VHF power transistor

Philips Electronics 

Philips Semiconductors

HF/VHF power transistor

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (VBE = 0)

peak value

Collector-emitter voltage (open base)

Emitter-base voltage (open-collector)

Collector current (average)

Collector current (peak value); f > 1 MHz

R.F. power dissipation (f > 1 MHz); Tmb = 25 °C

Storage temperature

Operating junction temperature

VCESM

VCEO

VEBO

IC(AV)

ICM

Prf

Tstg

Tj

Product specification

BLW83

max.

65 V

max.

36 V

max.

4V

max.

3A

max.

9A

max.

76 W

−65 to + 150 °C

max. 200 °C

handbook,1h0alfpage

IC

(A)

1

MGP586

Th = 70 °C

Tmb = 25 °C

handboo1k,0h0alfpage

MGP587

Prf

(W)

50

short-time

operation

during mismatch

continuous

r.f. operation

derate by

0.42 W/K

continuous

d.c. operation

derate by 0.32 W/K

10−1

1

10

VCE (V)

102

0

0

50

100 Th (°C) 150

Fig.2 D.C. SOAR.

THERMAL RESISTANCE

(dissipation = 35 W; Tmb = 80 °C, i.e. Th = 70 °C)

From junction to mounting base (d.c. dissipation)

From junction to mounting base (r.f. dissipation)

From mounting base to heatsink

Fig.3 R.F. power dissipation; VCE ≤ 28 V; f ≥ 1 MHz.

Rth j-mb(dc)

=

Rth j-mb(rf)

=

Rth mb-h

=

3,15 K/W

2,35 K/W

0,3 K/W

August 1986

3

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