BLW30 Ver la hoja de datos (PDF) - Philips Electronics

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Fabricante

BLW30

VHF power transistor

Philips Electronics 

Philips Semiconductors

VHF power transistor

Product specification

BLW30

APPLICATION INFORMATION

RF performance at Tmb = 25 °C in a common emitter test circuit.

MODE OF OPERATION

f

VCE

(MHz)

(V)

c.w. class-B

175

12.5

PL

(W)

30

GP

(dB)

> 10

typ. 11

ηC

(%)

> 55

typ. 60

handbook,1h6alfpage

GP

(dB)

GP

12

MRA376

80

η

η

(%)

60

8

40

4

20

0

0

10

20

30

40

PL (W)

Class-B operation; VCE = 12.5 V; f = 175 MHz.

Fig.6 Gain and efficiency as functions of load

power, typical values.

handboPok,5h0alfpage

L

(W)

40

MRA381

30

20

10

0

0

1

2

3

4

5

6

PIN (W)

Class-B operation; VCE = 12.5 V; f = 175 MHz.

Fig.7 Load power as a function of drive power,

typical values.

Ruggedness in class-B operation

The BLW30 is capable of withstanding a full load mismatch

corresponding to VSWR = 50:1 through all phases at rated

output power, up to a supply voltage of 15.5 V, and f =

175 MHz.

September 1991

6

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