BLW30 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BLW30 Datasheet PDF : 11 Pages
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Philips Semiconductors
VHF power transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC, IC(AV)
ICM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
collector current
total power dissipation
Tstg
storage temperature range
Tj
junction operating temperature
open emitter
open base
open collector
DC or average value
peak value
f > 1 MHz
RF operation;
f > 1 MHz;
Tmb = 25 °C
Product specification
BLW30
MIN.
−
−
−
−
−
MAX. UNIT
36
V
16
V
3
V
6
A
18
A
−
100 W
−65 150 °C
−
200 °C
handPbotootk1, 2h0alfpage
(W)
100
II
80
I
60
MRA382
40
20
0
0
20 40 60 80 100 120
Th (oC)
(I) Continuous RF operation (f > 1 MHz).
(II) Short time operation during mismatch
(f > 1 MHz).
Fig.2 Power/temperature derating curve.
THERMAL RESISTANCE
SYMBOL
Rth j-mb(RF)
PARAMETER
from junction to mounting base
Rth mb-h
from mounting base to heatsink
CONDITIONS
Ptot = 100 W;
Tmb = 25 °C
MAX.
1.75
0.45
UNIT
K/W
K/W
September 1991
3
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