BLV11 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BLV11 Datasheet PDF : 11 Pages
| |||
Philips Semiconductors
VHF power transistor
Product specification
BLV11
25
handbook, halfpage
PL
(W)
20
15
Th = 25 °C
70 °C
MGP266
10
5
0
2.5
5
7.5
PS (W)
VCE = 13,5 V;
− − − VCE = 12,5 V.
Fig.9 Typical values; f = 175 MHz;
10
handbooGk,phalfpGagpe
(dB)
7.5
5
Th = 25 °C
2.5
70 °C
MGP267
Th = 25 °C
70 °C
100
η
(%)
η
50
0
0
5
10
15
20
PL (W)
VCE = 13,5 V;
− − − VCE = 12,5 V.
Fig.10 Typical values; f = 175 MHz.
haPnLdnbooomk,1h7alfpage
(W)
(VSWR = 1)
16
The transistor has been developed for use with
15
unstabilized supply voltages. As the output power
and drive power increase with the supply voltage,
the nominal output power must be derated in
accordance with the graph for safe operation at
14
supply voltages other than the nominal. The graph
shows the permissible output power under
nominal conditions (VSWR = 1), as a function of
the expected supply over-voltage ratio with VSWR
13
as parameter.
The graph applies to the situation in which the
drive (PS/PSnom) increases linearly with supply
over-voltage ratio.
12
1
1.1
MGP268
VSWR =
4.5
5
10
20
PS
50 PSnom
1.2
VCE 1.3
VCEnom
Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; Th = 70 °C;
Rth mb-h = 0,3 K/W; VCEnom = 13,5 V or 12,5 V; PS = PSnom at VCEnom and VSWR = 1.
August 1986
8
Share Link: 