BLF248 Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
BLF248 Datasheet PDF : 16 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF248
20
handbook, halfpage
Gp
(dB)
15
10
MGP209
80
ηD
Th = 25 °C
ηD
(%)
70 °C
60
Gp
25 °C
70 °C 40
5
20
0
0
0
100
200
300
400
PL (W)
Class-AB operation; VDS = 28 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); ZL = 0.79 − j0.11 Ω (per
section); f = 225 MHz.
Fig.9 Power gain and efficiency as functions of
load power; typical values.
400
handbook, halfpage
PL
(W)
300
200
Th = 25 °C
70 °C
MGP210
100
0
0
10
20
30
40
PIN (W)
Class-AB operation; VDS = 28 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); ZL = 0.79 − j0.11 Ω (per
section); f = 225 MHz.
Fig.10 Load power as a function of input power;
typical values.
2003 Sep 02
7
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