BLF248 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BLF248 Datasheet PDF : 16 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF248
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Per transistor section unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current (DC)
Ptot
total power dissipation
Tstg
storage temperature
Tmb ≤ 25 °C total device;
both sections equally loaded
MIN.
−
−
−
−
MAX. UNIT
65
V
±20 V
25
A
500 W
−65 150 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
PARAMETER
thermal resistance from junction to
mounting base
thermal resistance from mounting base to
heatsink
CONDITIONS
total device; both sections
equally loaded.
total device; both sections
equally loaded.
VALUE
0.35
0.15
UNIT
K/W
K/W
handbook1, h0a2lfpage
ID
(A)
(1)
10
MRA933
(2)
600
handbook, halfpage
Ptot
(W)
(2)
400
(1)
200
MGP203
1
1
10
102
VDS (V)
(1) Current is this area may be limited by RDSon.
(2) Tmb = 25 °C.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
0
0
50
100
150
Th (°C)
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Fig.3 Power derating curves.
2003 Sep 02
3
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