BLF147 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BLF147 Datasheet PDF : 15 Pages
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NXP Semiconductors
VHF power MOS transistor
Product specification
BLF147
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VDS
VGS
ID
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
Tmb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
MIN.
−
−
−
−
−65
−
MAX.
65
±20
25
220
150
200
UNIT
V
V
A
W
°C
°C
VALUE
0.8
0.2
UNIT
K/W
K/W
handbook1, h0a2lfpage
ID
(A)
(1)
10
MRA904
(2)
1
1
10
VDS (V)
102
(1) Current is this area may be limited by RDSon.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
handboo3k,0h0alfpage
Ptot
(W)
(1)
200
(2)
100
MGP049
0
0
50
100
150
Th (°C)
(1) Short-time operation during mismatch.
(2) Continuous operation.
Fig.3 Power derating curves.
Rev. 06 - 5 December 2006
3 of 15
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