BLF642 Ver la hoja de datos (PDF) - NXP Semiconductors.

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componentes Descripción

Fabricante

BLF642

Broadband power LDMOS transistor

NXP Semiconductors. 

NXP Semiconductors

BLF642

Broadband power LDMOS transistor

Table 8. List of components

For production test circuit, see Figure 8 .

Printed-Circuit Board (PCB): Rogers 5880; r = 2.2; height = 0.762 mm; Copper (top/bottom

metallization); thickness copper plating = 35 m.

Component Description

Value

Remarks

C1

multilayer ceramic chip capacitor

22 pF

[1]

C2

multilayer ceramic chip capacitor

5.1 pF

[2]

C3

multilayer ceramic chip capacitor

4.3 pF

[2]

C4

multilayer ceramic chip capacitor

10 pF

[2]

C5

electrolytic chip capacitor

10 F; 50 V

C6

multilayer ceramic chip capacitor

22 nF

C11, C12

multilayer ceramic chip capacitor

22 pF

[1]

C13, C14

multilayer ceramic chip capacitor

6.2 pF

[1]

C15

multilayer ceramic chip capacitor

4.3 pF

[1]

C16

multilayer ceramic chip capacitor

1.2 pF

[1]

C17

multilayer ceramic chip capacitor

22 pF

[1]

C18, C19

multilayer ceramic chip capacitor

10 F

[3]

C20

electrolytic capacitor

470 F; 63 V

R1

wire resistor

100 

[1] American Technical Ceramics type 100B or capacitor of same quality.

[2] American Technical Ceramics type 100A or capacitor of same quality.

[3] TDK C570X7R1H106KT000N or capacitor of same quality.

BLF642

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 22 July 2011

© NXP B.V. 2011. All rights reserved.

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