BGY2016 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BGY2016 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF amplifier module
Product specification
BGY2016
FEATURES
• 26 V nominal supply voltage
• 16 W output power into a load of 50 Ω with an RF drive
power of ≤20 mW.
APPLICATIONS
• Base station transmitting equipment operating in the
1805 to 1990 MHz frequency band.
PINNING - SOT365A
PIN
1
2
3
4
Flange
DESCRIPTION
RF input
VS1
VS2
RF output
ground
DESCRIPTION
The BGY2016 is a three-stage UHF amplifier module in a
SOT365A package with a plastic cap. It consists of three
NPN silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic AlN substrate.
handbook, halfpage
12
34
MSA447
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
MODE OF OPERATION
f
(MHz)
VS1
VS2
PL
Gp
η
ZS; ZL
(V)
(V)
(W)
(dB)
(%)
(Ω)
CW
1805 to 1990
5
26
≥16
≥28
≥30
50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VS1
VS2
PD
PL
Tstg
Tmb
PARAMETER
DC supply voltage
DC supply voltage
input drive power
load power
storage temperature
operating mounting base temperature
CONDITIONS
Tmb = 25 °C
MIN.
4.5
−
−
−
−30
−10
MAX.
5.5
28
120
20
+100
+90
UNIT
V
V
mW
W
°C
°C
2000 Oct 17
2
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